| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve operation characteristics of a memory. <P>SOLUTION: The semiconductor memory includes: a memory cell array 1 including a plurality of memory cells which store data corresponding to each of a plurality of threshold values; a plurality of latches 341 having a plurality of transistors and flip flops which hold data sent from an exterior unit or data sent from the memory cell; a buffer circuit 32 having the plurality of the latches; and a control circuit which makes any one of the plurality of the latches 341 a non-active state by turning the transistor off. <P>COPYRIGHT: (C)2013,JPO&INPIT |
