发明名称 METHOD AND SYSTEM FOR FORMING NON-MANHATTAN PATTERNS USING VARIABLE SHAPED BEAM LITHOGRAPHY
摘要 A method and system for fracturing or mask data preparation or proximity effect correction is disclosed in which a series of charged particle beam shots is determined, where the series of shots is capable of forming a continuous non-manhattan track on a surface, such that the non-manhattan track has a line width roughness (LWR) which nearly equals a target LWR. A method and system for fracturing or mask data preparation or proximity effect correction is also disclosed in which at least two series of shots are determined, where each series of shots is capable of forming a continuous non-manhattan track on a surface, and where the space between tracks has space width roughness (SWR) which nearly equals a target SWR.
申请公布号 US2012278770(A1) 申请公布日期 2012.11.01
申请号 US201213429357 申请日期 2012.03.24
申请人 FUJIMURA AKIRA;BORK INGO;JACQUES ETIENNE;D2S, INC. 发明人 FUJIMURA AKIRA;BORK INGO;JACQUES ETIENNE
分类号 G06F17/50 主分类号 G06F17/50
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