COMPOSITE SUBSTRATE HAVING SINGLE-CRYSTAL SILICON CARBIDE SUBSTRATE

摘要

A first vertex of a first single-crystal silicon carbide substrate and a second vertex of a second single-crystal silicon carbide substrate abut each other such that a first side of the first single-crystal silicon carbide substrate and a second side of the second single-crystal silicon carbide substrate are aligned. In addition, at least a part of the first side and at least a part of the second side abut on a third side of a third single-crystal silicon carbide substrate. Thus, in manufacturing a semiconductor device including a composite substrate, process fluctuations caused by a gap between the single-crystal silicon carbide substrates can be suppressed.