InGaAlN LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide an InGaAlN light-emitting device and a method of manufacturing the same.

SOLUTION: A light-emitting device includes: a conductive substrate 11 having a main surface and a back surface: a metal bonding layer 12 formed on the main surface of the substrate; a light-reflecting layer 13 formed on the bonding layer; a semiconductor multilayer structure 14 including at least a p-type and an n-type InGaAlN layer disposed on the reflecting layer 13; the p-type InGaAlN layer directly contacting the reflecting layer 13; and ohmic electrodes 15 and 16 disposed on the n-type InGaAlN layer and on the back surface of the conductive substrate, respectively.

COPYRIGHT: (C)2013,JPO&INPIT