发明名称 PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide an oxide film removal method capable of removing an oxide film at a high speed by irradiating an oxide film formed on an object to be treated with hydrogen radical of larger than a required amount for separating oxygen atoms included in an oxide film, and eliminating damage to the object to be treated or the like by adjusting temperatures of plasma containing the hydrogen radical. <P>SOLUTION: A coating formed by bonding atoms of a surface of an object to be treated with at least one type of oxygen atoms, nitrogen atoms, or sulfur atoms is irradiated with plasma generated by applying a voltage to plasma generation gas to remove the oxygen atoms, nitrogen atoms, or sulfur atoms contained in the coating. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012212803(A) 申请公布日期 2012.11.01
申请号 JP20110078120 申请日期 2011.03.31
申请人 OKINO AKITOSHI;MIYAHARA SHUICHI 发明人 OKINO AKITOSHI;MIYAHARA SHUICHI;SASAKI RYOTA;KABURAGI YUIKI
分类号 H01L21/3065;B08B7/00;C23F4/00 主分类号 H01L21/3065
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