发明名称 MEMORY DEVICE AND MANUFACTURING METHOD THE SAME
摘要 A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element.
申请公布号 US2012273778(A1) 申请公布日期 2012.11.01
申请号 US201213546013 申请日期 2012.07.11
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 ASAMI YOSHINOBU;TAKANO TAMAE;SAKAKURA MASAYUKI;NOMURA RYOJI;YAMAZAKI SHUNPEI
分类号 H01L29/12 主分类号 H01L29/12
代理机构 代理人
主权项
地址