MICROWAVE PLASMA GENERATION DEVICE, AND MAGNETRON SPUTTERING FILM DEPOSITION DEVICE USING SAME

摘要

A microwave plasma generation device (4) comprises a rectangular waveguide (41) for transmitting microwaves, a slot antenna (42) having a slot (420) through which the microwaves pass, and a dielectric part (43) disposed so as to cover the slot (420), the surface on the plasma generating area side being parallel to the incident direction of the microwaves incident from the slot (420). The microwave plasma generation device (4) is capable of generating microwave plasma (P1) at a low pressure of 1 Pa or less. A magnetron sputtering film deposition device (1) comprises the microwave plasma generation device (4), and deposits a film by magnetron plasma (P2) while radiating microwave plasma (P1) between a substrate (20) and a target (30). A thin film having small irregularities in the surface can be formed using the magnetron sputtering film deposition device (1).