| 摘要 |
<p>Provided in the present invention is a thermal oxidation system, comprising: a reactor for use in preparing oxidized silicon by wet oxidation and a water vapor generation chamber in which a raw material gas reacts to generate water vapor which is transferred into the reactor via a pipe; a raw material gas intake pipe for use in supplying the raw material gas to the vapor generating chamber, a carrier gas intake pipe for use in supplying the carrier gas to the reactor, and a heater coupled to the raw material gas intake pipe for use in heating the raw material gas allowing same to generate the water vapor. The system is characterized in that: also comprised is a heater apparatus coupled to the carrier gas intake pipe. In the thermal oxidation system and a method therefor of the present invention, because the carrier gas is heated, liquid water accumulation is prevented in the intake pipe, thus controlling the quality of thin film growth, and improving the reliability of semiconductor components.</p> |
