| 摘要 |
<p>A method of manufacturing a CIGS solar energy photoelectric quaternary sputtering target, a method of bonding the same with the target backing plate, and a method of supplementing material thereof are disclosed. The method of manufacturing the CIGS solar energy photoelectric quaternary sputtering target includes the following steps that: mixing copper and indium; preforming copper and indium alloy powder(10) by hot melting, hardening, and grinding; mixing copper and gallium; preforming copper and gallium alloy powder(20) by hot melting, hardening, and grinding; mixing the copper and indium alloy powder, the copper and gallium alloy powder and selenium material powder(31) sufficiently to prepare powder(40); then filling the powder into a mould (50), rapidly moulding a target(60) containing copper, indium, gallium and selenium by means of the procedures including heating, hot melting, and pressing. In the method of bonding the target with the target backing plate (52), the target backing plate is designed as a part of the mould such that the target bond with the target backing plate as a whole body while the target is moulded. In the method of supplementing material, after the used target (61) is washed and placed into the mould, the powder is filled. After procedures including hot melting, pressing, and cooling, the target can be added to the size of required specification for being reused. By these methods, the manufacture of the GIGS target, the bond of the target with the target backing plate and the material supplementing process are simplified, and the costs can be significantly reduced.</p> |
