发明名称 POWER AMPLIFICATION TUBE AND POWER AMPLIFICATION METHOD
摘要 <p>Disclosed are a power amplification tube and a power amplification method. The power amplification tube includes a high electron mobility transistor (HEMT) power amplification core and a laterally diffused metal oxide semiconductor (LDMOS) power amplification tube core which are integrated into the same encapsulation. The present invention should be set as a Doherty amplifier, and the power tube is designed using a revolutionary brand-new way of power amplification tube core combination. Compared with the existing Doherty amplifiers which use LDMOS power amplification tube cores throughout, power amplification with high efficiency can be realized on the basis of ensuring a small volume of power amplification tube.</p>
申请公布号 WO2012146011(A1) 申请公布日期 2012.11.01
申请号 WO2011CN81423 申请日期 2011.10.27
申请人 ZTE CORPORATION;HE, GANG;CHEN, HUAZHANG;CUI, XIAOJUN 发明人 HE, GANG;CHEN, HUAZHANG;CUI, XIAOJUN
分类号 H03F3/21 主分类号 H03F3/21
代理机构 代理人
主权项
地址