| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element having high light extraction efficiency. <P>SOLUTION: A manufacturing method of a semiconductor light-emitting element including a first semiconductor layer 120, a second semiconductor layer 140, a light-emitting layer 130 provided between the first semiconductor layer 120 and the second semiconductor layer 140, a first electrode 160 connected to the first semiconductor layer 120, and a second electrode 150 provided on the second semiconductor layer 140 with a side facing the second semiconductor layer 140 being composed of at least either one of silver or a silver alloy, comprises: forming a conductive film to be the second electrode 150 on the second semiconductor layer 140; and forming air gap with a width of an emission wavelength or less of the light-emitting layer on a surface of the conductive film facing the second semiconductor layer 140 by causing self organization by migration of the conductive film. <P>COPYRIGHT: (C)2013,JPO&INPIT |
