| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a substrate removing method that can easily remove a substrate from an electrostatic chuck. <P>SOLUTION: In a substrate processing device 10 having an electrostatic chuck 23 containing an electrostatic electrode plate 22 to which a DC voltage is applied and a chamber 11 containing the electrostatic chuck 23 therein, the potential of the electrostatic electrode plate 22 of the electrostatic chuck 23 which is kept to a first predetermined potential during plasma etching processing is set to the ground potential after the plasma etching processing to increase the absolute value of the potential difference between the wafer W and the chamber 11 and induce DC discharge 40 between the wafer W and the chamber 11. After the DC discharge 40 occurs, a DC voltage having the same potential as a second predetermined potential occurring on the wafer W is applied to the electrostatic electrode plate 22 to increase the absolute value of the potential difference between the wafer W and the chamber 11 and induce DC discharge 42, and the wafer W is removed from the electrostatic chuck 23. <P>COPYRIGHT: (C)2013,JPO&INPIT |
