METHOD FOR LAMINATING SILICON OXIDE FILM AND SILICON NITRIDE FILM, AND FILM FORMING APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for laminating a silicon oxide film and a silicon nitride film which can suppress an increase in warpage of a substrate having a laminated structure formed by laminating a silicon oxide film and a silicon nitride film formed therein, even when a lamination number of the silicon oxide film and the silicon nitride film is increased.

SOLUTION: In the method for laminating a silicon oxide film 1-1 and a silicon nitride film 2-1 which laminates the silicon oxide film 1-1 and the silicon nitride film 2-1 on a substrate W, a boron is added to a gas forming the silicon nitride film 2.

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