| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve reliability in wiring. <P>SOLUTION: A semiconductor device manufacturing method comprises the steps of: sequentially forming a wiring layer 11 and an interlayer insulation film 12 on a semiconductor substrate; forming trench grooves 13 in the interlayer insulation film 12 and via holes 14 reaching the wiring layer 11 in the trench grooves 13; depositing a metal film 15 made from any one of titanium, zirconium and manganese or an alloy of titanium, zirconium and manganese in the trench grooves 13, in the via holes 14 and on the interlayer insulation film 12; etching the metal film 15 on bottoms of the via holes 14 by using a sputtering method, and depositing a metal film 16 made from any one of tantalum and tungsten, or an alloy of tantalum and tungsten on bottoms and sidewalls of the trench grooves 13 and sidewalls of the via holes 14; further generating a new metal film on the sidewalls of the via holes 14 by respective metals; and forming a wiring layer by filling a conductive material 17a in the via holes 14 and the trench grooves 13. <P>COPYRIGHT: (C)2013,JPO&INPIT |
