发明名称 Method for Adjusting Metal Polishing Rate and Reducing Defects Arisen in a Polishing Process
摘要 The invention discloses a method for adjusting metal polishing rate and reducing defects arisen in a polishing process, in which a electric conduction system is additionally provided to a polishing apparatus to electrify the polishing fluid; in the polishing process, the polishing fluid flows through the polishing pad and the wafer to be polished, such that the polished metal surface of the wafer is electrically charged so as to control the oxidation of the polished metal surface of the wafer. The invention has solved the problem that the dishing and erosion defects are prone to be formed in the existing polishing process, the potential of the polishing fluid is changed by means of the additional electric conduction system and thus the polishing rate of the polished metal is controlled so as to reduce the dishing and erosion defects occurred in the polishing process.
申请公布号 US2012276820(A1) 申请公布日期 2012.11.01
申请号 US201113339538 申请日期 2011.12.29
申请人 ZHANG SHOULONG;BAI YINGYING;CHEN YUWEN;SHANGHAI HUALI MICROELECTRONICS CORPORATION 发明人 ZHANG SHOULONG;BAI YINGYING;CHEN YUWEN
分类号 B24B1/00 主分类号 B24B1/00
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