发明名称 THIN FILM TRANSISTORS (TFT) ACTIVE-MATRIX IMOD PIXEL LAYOUT
摘要 This disclosure provides systems, methods and apparatus relating to pixel designs for use in active matrix displays which employ poly-silicon (p-Si) thin-film transistors (TFTs) having dual gate structures to control the pixels. The poly-silicon island of the TFT is configured to take advantage of the black mask area attributable to other non-reflective display components, thus enhancing the fill factor of the display.
申请公布号 US2012274611(A1) 申请公布日期 2012.11.01
申请号 US201113094480 申请日期 2011.04.26
申请人 SEO JAE HYEONG;MIGNARD MARC MAURICE;TUNG MING-HAU;MARTIN RUSSEL ALLYN;QUALCOMM MEMS TECHNOLOGIES, INC. 发明人 SEO JAE HYEONG;MIGNARD MARC MAURICE;TUNG MING-HAU;MARTIN RUSSEL ALLYN
分类号 G09G5/00;H01L33/58 主分类号 G09G5/00
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