RESISTIVE NON-VOLATILE STORAGE DEVICE AND DRIVE METHOD FOR SAME

摘要

The objective of the present invention is to provide a resistive non-volatile storage device and drive method for the resistive non-volatile storage device which are highly reliable and capable of stable operation. This resistive non-volatile storage device (200) is provided with a memory cell array (202), memory cell selection circuits (203 and 204), a write circuit (205), and a read circuit (206). The read circuit (206) assesses that a selected memory cell has a defective memory cell which has a short circuit if current greater than or equal to a predetermined value flows in the selected memory cell. The write circuit (205), with respect to memory cells other than the defective memory cell which are disposed upon the same bit line and/or the same word line as the defective memory cell, applies a second high-resistance pulse so as to cause resistance changing elements of the other memory cells to be of a second high-resistance state which indicates a resistance value which is greater than or equal to the resistance value of a first high-resistance state.