| 摘要 |
<p>PURPOSE: A semiconductor device is provided to efficiently control a channel length of an oxide semiconductor film by properly setting a depth of a trench even though a distance between a source electrode layer and a drain electrode layer is narrow. CONSTITUTION: A trench(131) includes a lower corner part with a curved condition. The lower corner part has the radius of curvature between 20 and 60 nm. An oxide semiconductor layer(144) is contacted with the lower side, the lower corner part, and the inner wall of the trench. A gate insulation layer(146) is formed on the oxide semiconductor layer. A gate electrode layer(148) is formed on the gate insulation layer.</p> |
