| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve operation characteristics of a memory. <P>SOLUTION: The semiconductor memory includes: a memory cell array 1 including a plurality of memory cells which are arrayed in a row direction and a column direction and store data corresponding to each of a plurality of threshold values; a row control circuit 2 which controls the row of the memory cell array 1; and a column control circuit 3 having a control unit 70 for generating a signal CNT for controlling the column of the memory cell array 1 on the basis of a pointer PT corresponding to an address signal sent from an exterior unit. <P>COPYRIGHT: (C)2013,JPO&INPIT |
