发明名称 |
METHOD FOR FORMING TRANSPARENT GAS BARRIER LAYER, TRANSPARENT GAS BARRIER LAYER, TRANSPARENT GAS BARRIER FILM, ORGANIC ELECTROLUMINESCENT ELEMENT, SOLAR CELL, AND THIN FILM BATTERY |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming a transparent gas barrier layer, by which a transparent gas barrier layer having excellent gas barrier property even in a single layer, high transparency and very low internal stress can be formed without heating at high temperature. <P>SOLUTION: In a method for forming a transparent gas barrier layer by means of a sputtering method, a target including at least one carbide selected from a metal carbide and a metalloid carbide is used, and hydrogen-containing gas is used as reaction gas. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2012212577(A) |
申请公布日期 |
2012.11.01 |
申请号 |
JP20110078056 |
申请日期 |
2011.03.31 |
申请人 |
NITTO DENKO CORP |
发明人 |
YAMADA YASUYOSHI |
分类号 |
H05B33/02;H01L31/042;H01L51/50;H01M2/02;H01M10/0562;H01M10/0585;H05B33/10 |
主分类号 |
H05B33/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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