| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device with a high breakdown voltage while suppressing an increase in circuit area. <P>SOLUTION: A first semiconductor layer of a first conductivity type extends from an element region in a first direction as a longitudinal direction and is formed to an element termination region, has a first impurity concentration, and functions as a drain region of a MOS transistor. A second semiconductor layer of the first conductivity type extends from the element region in the first direction as the longitudinal direction and is formed to the element termination region, has a second impurity concentration lower than the first impurity concentration, is disposed so as to connect with the first semiconductor layer, and functions as a drift layer of the MOS transistor. The element region and the element termination region has the same width in a second direction orthogonal to the first direction. The width of the second semiconductor layer in the element termination region is wider than that of the second semiconductor layer in the element region, regarding the cross section along the second direction. <P>COPYRIGHT: (C)2013,JPO&INPIT |
