| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide things and methods for reducing or eliminating device wafer breakage and internal device damage. <P>SOLUTION: A TiO<SB POS="POST">2</SB>-containing quartz glass substrate has the thermal expansion coefficient at 15-35°C within ±200 ppb/°C, the TiO<SB POS="POST">2</SB>concentration of 4-9 wt.%, and the TiO<SB POS="POST">2</SB>concentration distribution, in the surface vicinity region within 50 μm of depth from the substrate surface on the side where transfer patterns are formed, within ±1 wt.%. <P>COPYRIGHT: (C)2013,JPO&INPIT |
