LASER CRYSTALLIZATION PROCESS AND SYSTEM FOR PROCESSING A FILM REGION ON A BASE TO SUBSTANTIALLY UNIFORMIZE INSIDE AND END PORTIONS OF THE FILM REGION

摘要

PROBLEM TO BE SOLVED: To provide a system that processes a thin film sample and a thin film structure.

SOLUTION: First portions of each particular part in one section of a film sample 170 are irradiated with a first small beam having first pulses of irradiation beam pulses so as to be melted. The first portions are at least partially melted and re-solidified by itself to be crystallized, so that each first un-irradiated portion remains between the first portions, which are mutually adjacent. After the particular part is irradiated with the first small beam, second portions of the particular part are irradiated again with a second small beam having second pulses of the irradiation beam pulses so as to be melted. The second portions are at least partially melted and re-solidified by itself to be crystallized, so that each second un-irradiated portion remains between the second portions, which are mutually adjacent. The re-solidified and crystallized first and second portions get in each other in the region of the film sample 170. In addition, the first portions correspond to first pixels, and the second portions correspond to second pixels.

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