| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress a decrease in yield of manufacture of a semiconductor circuit using photolithography by using a photomask obtained from a photomask blank of the present invention, and thereby reducing defects caused by a substance (for example, ammonium sulfate) containing ammonium produced owing to an ingredient emitted from a film constituting a photomask and containing nitrogen even when the photomask is used for a stepper or a scanner for a long period of time. <P>SOLUTION: On a substrate which is transparent to exposure light, an optical functional film which contains silicon, nitrogen, and oxygen and includes the oxygen by 7 atom% or more and 30 atom% or less is formed by sputtering in an atmosphere including oxygen-containing gas. After the sputtering film formation, in the state where no other film is laminated on the optical functional film, a photo mask having a mask pattern formed by using a photomask blank obtained by heat-treating the obtained optical functional film in an atmosphere including oxygen-containing gas is used to transfer a mask pattern. <P>COPYRIGHT: (C)2013,JPO&INPIT |
