| 摘要 |
A nitride semiconductor light-emitting diode device includes an n-type nitride semiconductor layer, a p-type nitride semiconductor layer and an active layer provided between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer, while the active layer has a multiple quantum well structure including a quantum well layer and a barrier layer in contact with the p-type semiconductor layer, the barrier layer consists of a two-layer structure of an AlGaN layer and a GaN layer, and the AlGaN layer included in the barrier layer is in contact with a side of the quantum well layer closer to the p-type nitride semiconductor layer |
