Plasma treatment device for treating e.g. semiconductor substrate, has electrodes arranged in pairs with same distance from center plane of chamber such that microwaves of electrodes are partially offset with respect to each other

摘要

The device (1) has a process chamber (4) for receiving of a planar substrate (2). A set of rod-shaped microwave electrodes (82) partially extends parallel to each other in the process chamber, where the electrodes include an outer conductor that partially surrounds an inner conductor of the electrode. The electrodes are arranged in pairs with the same distance from a center plane of the process chamber such that maximum standing microwaves of the electrodes are partially offset with respect to each other perpendicular to a longitudinal extension of the electrodes. An independent claim is also included for a method for treating substrates with a plasma in a process chamber.