Method for manufacturing integrated pressure sensor of highly integrated switching circuit, involves forming diaphragm by formation of depression of substrate by back corrosion of substrate

摘要

The method involves forming deep well (104) in diffusion region (103) formed in silicon substrate (100). A silicon nitride layer (101) is patterned for growing structured field oxide (105). A diaphragm (102) is formed by the formation of depression of substrate by back corrosion of substrate with potassium hydroxide or with deep reactive ion etching (DRIE) process. The insulation and passivation films (107) are removed from diaphragm using patterned silicon nitride film (101a). The metal layers (106) are partially covered through insulation and passivation films, so that edges of insulation and passivation films are connected to patterned silicon nitride layer. The insulation and passivation films are formed by final passivation of the circuit.