发明名称
摘要 PROBLEM TO BE SOLVED: To always establish optimal output resistance in self-cascode method. SOLUTION: Two nMISFETs (MN1 and MN2) with the same polarity wherein sources or drains are connected in series with each other are provided on a semiconductor substrate. The gates of MN1 and MN2 are connected to the same gate terminal VG. DC gate bias voltage and AC signal voltage are applied to the gate terminal VG. Higher potential is applied to the drain of MN2 than that of MN1. DC substrate bias voltage VSUB applied to the MN2 substrate is higher than ground voltage applied to MN1 substrate. The DC substrate bias voltage VSUB of MN2 varies according to the condition of a circuit. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP5061588(B2) 申请公布日期 2012.10.31
申请号 JP20060310476 申请日期 2006.11.16
申请人 发明人
分类号 H01L27/088;H01L21/822;H01L21/8234;H01L27/04;H03F1/22;H03F3/16 主分类号 H01L27/088
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