发明名称 CHARGE PUMP CIRCUIT, METHOD FOR CONTROLLING SAME, AND SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 There is provided a charge pump circuit suited for reducing the power consumption. A capacitor 201a, a capacitor 201b, a capacitor 201c, and switching elements 202a to 202k, for electrically connecting or separating capacitors 201a, 201b, and 201c, repeats: a first state where charge supplied from an input power-supply voltage V DD is accumulated in the capacitors 201a and 201b; a second state where the charge accumulated in the capacitor 201a is transferred to the third capacitor 201c, and a positive output power-supply voltage is held by the charge accumulated in the capacitor 201b; a third state where the charge supplied from an input power supply is accumulated in the capacitors 201a and 201b; and a fourth state where the charge accumulated in the capacitor 201b is transferred to the third capacitor 201c, and the positive output power-supply voltage V CC is held by the charge accumulated in the capacitor 201a.
申请公布号 EP2518877(A1) 申请公布日期 2012.10.31
申请号 EP20110840414 申请日期 2011.11.10
申请人 ASAHI KASEI MICRODEVICES CORPORATION 发明人 HAMADA, TAKESHI;KOIZUMI, YOSHIHIKO
分类号 H02M3/07;G11C5/14;H01L21/822;H01L27/04 主分类号 H02M3/07
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