发明名称 THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME AND DISPLAY DEVICE USING THE SAME
摘要 <p>PURPOSE: A thin film transistor substrate and a manufacturing method thereof, and a display device using the same are provided to enhance on-current features of a thin film transistor without increasing resistance of a gate electrode. CONSTITUTION: An etch stopper(150) is formed on an active layer. The etch stopper comprises a first contact hole and a second contact hole to expose a predetermined area of the active layer. A source electrode(192) is electrically connected to the active layer through the first contact hole. A drain electrode(194) is electrically connected to the active layer through the second contact hole. A pixel electrode(180) is connected to the drain electrode on a lower surface of the drain electrode.</p>
申请公布号 KR20120119521(A) 申请公布日期 2012.10.31
申请号 KR20110037495 申请日期 2011.04.21
申请人 LG DISPLAY CO., LTD. 发明人 KIM, SUNG KI;LEE, HONG KOO;BAE, JUN HYEON;KIM, KI TAE
分类号 G02F1/136;G02F1/1368;H01L29/786 主分类号 G02F1/136
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