发明名称 |
THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME AND DISPLAY DEVICE USING THE SAME |
摘要 |
<p>PURPOSE: A thin film transistor substrate and a manufacturing method thereof, and a display device using the same are provided to enhance on-current features of a thin film transistor without increasing resistance of a gate electrode. CONSTITUTION: An etch stopper(150) is formed on an active layer. The etch stopper comprises a first contact hole and a second contact hole to expose a predetermined area of the active layer. A source electrode(192) is electrically connected to the active layer through the first contact hole. A drain electrode(194) is electrically connected to the active layer through the second contact hole. A pixel electrode(180) is connected to the drain electrode on a lower surface of the drain electrode.</p> |
申请公布号 |
KR20120119521(A) |
申请公布日期 |
2012.10.31 |
申请号 |
KR20110037495 |
申请日期 |
2011.04.21 |
申请人 |
LG DISPLAY CO., LTD. |
发明人 |
KIM, SUNG KI;LEE, HONG KOO;BAE, JUN HYEON;KIM, KI TAE |
分类号 |
G02F1/136;G02F1/1368;H01L29/786 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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