| 摘要 |
PURPOSE: A semiconductor memory device and an operating method thereof are provided to increase an operation speed by controlling data transmission between an input and output circuit and a second page buffer group using a first page buffer group and bit lines. CONSTITUTION: A memory array(110) includes a plurality of memory cells. Odd page buffers are connected to odd memory cells of a memory array through odd bit lines. Even page buffers(PBe1-PBe2) are connected to the even memory cells of the memory array through even bit lines and are connected to the odd page buffers through the odd bit lines. A control circuit(120) controls the even page buffers and the odd page buffers to transmit data from the even page buffers to the odd page buffers through the odd bit lines. [Reference numerals] (120) Control circuit; (130) Voltage generating circuit; (140) Row decoder; (160) Column selecting circuit; (170) Input and output circuit |
