PURPOSE: A non-volatile memory device is provided to increase storage capacity and to increase the reliability of a memory device. CONSTITUTION: A memory cell array is classified into a plurality of blocks. Each block includes a plurality of memory cells. A plurality of the memory cells is arranged in an area which crosses a plurality of word lines and a plurality of bit lines. At least one word line is classified into an upper word line group and a lower word line group.
申请公布号
KR20120119779(A)
申请公布日期
2012.10.31
申请号
KR20110037962
申请日期
2011.04.22
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
SEOL, CHANG KYU;KIM, EUN CHEOL;KONG, JUN JIN;SON, HONG RAK