发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE: A semiconductor IC is provided to implement efficient power mesh and to connect a chip penetration via by a conductive layer. CONSTITUTION: A semiconductor IC(Integrated Circuit)(200) includes semiconductor chips(210,220,230,240), a plurality of first chip penetration vias(250A,250B,250C), and a common conductive layer(280A). A plurality of the first chip penetration vias passes through the semiconductor chip in a vertical direction. A plurality of the first chip penetration vias interfaces a first power. The first common conductive layer is arranged on the top of the semiconductor chip. The first common conductive layer connects a plurality of the first chip penetration vias.
申请公布号 KR20120119512(A) 申请公布日期 2012.10.31
申请号 KR20110037482 申请日期 2011.04.21
申请人 SK HYNIX INC. 发明人 LEE, KANG SEOL;LEE, JAE JIN;IM, JAE HYUK
分类号 H01L23/48 主分类号 H01L23/48
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