发明名称 |
Mechanisms for forming ultra shallow junction |
摘要 |
The embodiments of methods and structures are for doping fin structures by plasma doping processes to enable formation of shallow lightly doped source and drain (LDD) regions. The methods involve a two-step plasma doping process. The first step plasma process uses a heavy carrier gas, such as a carrier gas with an atomic weight equal to or greater than about 20 amu, to make the surfaces of fin structures amorphous and to reduce the dependence of doping rate on crystalline orientation. The second step plasma process uses a lighter carrier gas, which is lighter than the carrier gas for the first step plasma process, to drive the dopants deeper into the fin structures. The two-step plasma doping process produces uniform dopant profile beneath the outer surfaces of the fin structures. |
申请公布号 |
US8298925(B2) |
申请公布日期 |
2012.10.30 |
申请号 |
US20100941509 |
申请日期 |
2010.11.08 |
申请人 |
WU CHII-MING;HUANG YU LIEN;TSAI CHUN HSIUNG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
WU CHII-MING;HUANG YU LIEN;TSAI CHUN HSIUNG |
分类号 |
H01L21/26;H01L21/02;H01L21/425 |
主分类号 |
H01L21/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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