发明名称 |
Temperature detection circuit of semiconductor memory apparatus |
摘要 |
A temperature detection circuit of a semiconductor memory apparatus includes a fixed period oscillator, a temperature variable signal generating unit and a counting unit. The oscillator is configured to generate a fixed period oscillator signal when an enable signal is enabled. The temperature variable signal generating unit is configured to generate a temperature variable signal whose enable interval varies based on temperature variations, when the enable signal is enabled. The counting unit is configured to count the oscillator signal during the enable interval of the temperature variable signal to generate a temperature information signal. |
申请公布号 |
US8300486(B2) |
申请公布日期 |
2012.10.30 |
申请号 |
US20090650073 |
申请日期 |
2009.12.30 |
申请人 |
KIM JE-YOON;LEE JONG-CHERN;HYNIX SEMICONDUCTOR INC. |
发明人 |
KIM JE-YOON;LEE JONG-CHERN |
分类号 |
G11C7/04 |
主分类号 |
G11C7/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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