发明名称 |
Nonvolatile memory device and related programming method |
摘要 |
A nonvolatile memory device comprises a memory cell array comprising a plurality of memory blocks each divided into a plurality of regions, and a control logic component. The control logic component selects a memory block to be programmed based on program/erase cycles of the memory blocks, and selects a program rule used to program the regions of the selected memory block. |
申请公布号 |
US8300463(B2) |
申请公布日期 |
2012.10.30 |
申请号 |
US20100726408 |
申请日期 |
2010.03.18 |
申请人 |
PARK KI TAE;KANG MYOUNG GON;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK KI TAE;KANG MYOUNG GON |
分类号 |
G11C16/04;G06F13/00;G11C16/06 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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