发明名称 Nonvolatile memory device and related programming method
摘要 A nonvolatile memory device comprises a memory cell array comprising a plurality of memory blocks each divided into a plurality of regions, and a control logic component. The control logic component selects a memory block to be programmed based on program/erase cycles of the memory blocks, and selects a program rule used to program the regions of the selected memory block.
申请公布号 US8300463(B2) 申请公布日期 2012.10.30
申请号 US20100726408 申请日期 2010.03.18
申请人 PARK KI TAE;KANG MYOUNG GON;SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK KI TAE;KANG MYOUNG GON
分类号 G11C16/04;G06F13/00;G11C16/06 主分类号 G11C16/04
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