| 发明名称 |
Method for fabrication of semipolar (Al, In, Ga, B)N based light emitting diodes |
| 摘要 |
A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed. |
| 申请公布号 |
US8299452(B2) |
申请公布日期 |
2012.10.30 |
| 申请号 |
US201213405590 |
申请日期 |
2012.02.27 |
| 申请人 |
SATO HITOSHI;HIRASAWA HIROHIKO;CHUNG ROY B.;DENBAARS STEVEN P.;SPECK JAMES S.;NAKAMURA SHUJI;THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
SATO HITOSHI;HIRASAWA HIROHIKO;CHUNG ROY B.;DENBAARS STEVEN P.;SPECK JAMES S.;NAKAMURA SHUJI |
| 分类号 |
H01L29/06;H01L33/06;H01L33/08;H01L33/16;H01L33/32 |
主分类号 |
H01L29/06 |
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