| 摘要 |
<p>A method of forming an integrated circuit structurecomprising the steps of forming afirst and second device region on a surface of a wafer, forming a spacer of a first width on a sidewall of a first gate stack in the first device region, forming a spacer of a second width on a sidewall of a second gate stack in the second device region, with the first width being diflèrenl from the second width.Figure 7</p> |
