发明名称 |
Semiconductor device employing transistor having recessed channel region and method of fabricating the same |
摘要 |
A semiconductor device employing a transistor having a recessed channel region and a method of fabricating the same is disclosed. A semiconductor substrate has an active region. A trench structure is defined within the active region. The trench structure includes an upper trench region adjacent to a surface of the active region, a lower trench region and a buffer trench region interposed between the upper trench region and the lower trench region. A width of the lower trench region may be greater than a width of the upper trench region. An inner wall of the trench structure may include a convex region interposed between the upper trench region and the buffer trench region and another convex region interposed between the buffer trench region and the lower trench region. A gate electrode is disposed in the trench structure. A gate dielectric layer is interposed between the gate electrode and the trench structure. |
申请公布号 |
US8299517(B2) |
申请公布日期 |
2012.10.30 |
申请号 |
US20080034482 |
申请日期 |
2008.02.20 |
申请人 |
JANG SUNG-HO;CHOI YONG-JIN;KANG MIN-SUNG;LEE KWANG-WOO;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JANG SUNG-HO;CHOI YONG-JIN;KANG MIN-SUNG;LEE KWANG-WOO |
分类号 |
H01L27/108 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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