发明名称 |
MEMS devices having support structures with substantially vertical sidewalls and methods for fabricating the same |
摘要 |
Embodiments of MEMS devices include support structures having substantially vertical sidewalls. Certain support structures are formed through deposition of self-planarizing materials or via a plating process. Other support structures are formed via a spacer etch. Other MEMS devices include support structures at least partially underlying a movable layer, where the portions of the support structures underlying the movable layer include a convex sidewall. In further embodiments, a portion of the support structure extends through an aperture in the movable layer and over at least a portion of the movable layer.
|
申请公布号 |
US8298847(B2) |
申请公布日期 |
2012.10.30 |
申请号 |
US20100766702 |
申请日期 |
2010.04.23 |
申请人 |
KOGUT LIOR;WANG CHUN-MING;QUI CHENGBIN;ZEE STEPHEN;ZHONG FAN;QUALCOMM MEMS TECHNOLOGIES, INC. |
发明人 |
KOGUT LIOR;WANG CHUN-MING;QUI CHENGBIN;ZEE STEPHEN;ZHONG FAN |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|