发明名称 Compact thermally controlled thin film resistors utilizing substrate contacts and methods of manufacture
摘要 A method of forming a semiconductor structure includes forming a resistor on an insulator layer over a substrate, and forming at least one dielectric layer over the resistor. The method also includes forming a substrate contact through the at least one dielectric layer, through the resistor, through the insulator layer, and into the substrate. The substrate contact comprises a high thermal conductivity material.
申请公布号 US8298904(B2) 申请公布日期 2012.10.30
申请号 US201113008465 申请日期 2011.01.18
申请人 LUKAITIS JOSEPH M.;RANKIN JED H.;ROBISON ROBERT R.;SLISHER DUSTIN K.;SULLIVAN TIMOTHY D.;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 LUKAITIS JOSEPH M.;RANKIN JED H.;ROBISON ROBERT R.;SLISHER DUSTIN K.;SULLIVAN TIMOTHY D.
分类号 H01L21/20 主分类号 H01L21/20
代理机构 代理人
主权项
地址