发明名称 |
Chemical vapor deposition apparatus |
摘要 |
Provided is a chemical vapor deposition apparatus. The apparatus includes a reaction chamber, a gas introduction unit, and a gas exhaust unit. The reaction chamber includes a susceptor on which a wafer is loaded and a reaction furnace in which the wafer is processed by chemical vapor deposition. The gas introduction unit is disposed at an outer wall of the reaction chamber to supply reaction gas from an outside of the reaction furnace to a center portion of the reaction furnace. The gas exhaust unit is disposed at a center portion of the reaction chamber to discharge the reaction gas to an upper or lower outside of the reaction chamber after the reaction gas is used for a reaction in the reaction furnace. Therefore, the gas density inside the chamber can be kept at a substantially uniform state even when process pressure is increased for growing a high-temperature deposition layer. |
申请公布号 |
US8298338(B2) |
申请公布日期 |
2012.10.30 |
申请号 |
US20080259709 |
申请日期 |
2008.10.28 |
申请人 |
KIM CHANGSUNG SEAN;YOO SANG DUK;HONG JONG PA;SHIM JI HYE;LEE WON SHIN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM CHANGSUNG SEAN;YOO SANG DUK;HONG JONG PA;SHIM JI HYE;LEE WON SHIN |
分类号 |
C23C16/455;C23C16/06;C23C16/22;C23F1/00;H01L21/306 |
主分类号 |
C23C16/455 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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