METHODS AND APPARATUS FOR A HYBRID CAPACITIVELY-COUPLEDAND AN INDUCTIVELY-COUPLED PLASMA PROCESSING SYSTEM

摘要

METHODS AND APPARATUS FOR A HYBRID CAPACITIVELY COUPLED AND AN INDUCTIVELYCOUPLED PLASMA PROCESSINC SYSTEM A capacitively-coupled plasma (CCP) processing system having a plasma processing chamber for processing a substrate is provided. The capacitively-coupled Plasma (CCP) processing system includes an upper electrode and a lower electrode for processing the substrate, which is disposed on the lower electrode during plasma processing. The capacitively-coupled Plasma (CCP) processing system also includes an array of inductor coils arrangement configured to inductively sustain plasma in a gap between the upper electrode and the lower electrode.METHODS AND APPARATUS FOR A HYBRID CAPACITIVELY-COUPLED AND AN INDUCTIVELY-COUPLED PLASMA PROCESSING SYSTEM A capacitively-coupled plasma (CCP) processing system having a plasma processing chamber for processing a substrate is provided. The capacitively-coupled Plasma (CCP) processing system includes an upper electrode and a lower electrode for processing the substrate, which is disposed on the lower electrode during plasma processing. The capacitively-coupled Plasma (CCP) processing system also includes an array of inductor coils arrangement configured to inductively sustain plasma in a gap between the upper electrode and the lower electrode.Fig. 3A