Semiconductor device having wiring layer with a wide wiring and fine wirings

摘要

Provided is a semiconductor device having a wiring layer formed of damascene wiring. The semiconductor device includes: a first wiring having a width equal to or larger than 0.5μm; a second wiring adjacent to the first wiring and arranged with a space less than 0.5μm from the first wiring; and a third wiring adjacent to the second wiring and arranged with a space equal to or smaller than 0.5μm from the first wiring. In the semiconductor device, the second wiring and the third wiring are structured to have the same electric potential.