发明名称 |
Laser annealing method and device |
摘要 |
A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction. |
申请公布号 |
US8299553(B2) |
申请公布日期 |
2012.10.30 |
申请号 |
US20100946051 |
申请日期 |
2010.11.15 |
申请人 |
KAWAKAMI RYUSUKE;NISHIDA KENICHIROU;KAWAGUCHI NORIHITO;MASAKI MIYUKI;YOSHINOUCHI ATSUSHI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
KAWAKAMI RYUSUKE;NISHIDA KENICHIROU;KAWAGUCHI NORIHITO;MASAKI MIYUKI;YOSHINOUCHI ATSUSHI |
分类号 |
H01L27/14;H01L31/00 |
主分类号 |
H01L27/14 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|