发明名称 |
High density integrated circuitry for semiconductor memory having memory cells with a minimum capable photolithographic feature dimension |
摘要 |
Processes are disclosed which facilitate improved high-density memory circuitry, most preferably dynamic random access memory (DRAM) circuitry. A semiconductor memory device includes i) a total of no more than 68,000,000 functional and operably addressable memory cells arranged in multiple memory arrays formed on a semiconductor die; and ii) circuitry formed on the semiconductor die permitting data to be written to and read from one or more of the memory cells. At least one of the memory arrays contains at least 100-square microns of continuous die surface area having at least 128 of the functional and operably addressable memory cells. More preferably, at least 100 square microns of continuous die surface area have at least 170 of the functional and operably addressable memory cells. |
申请公布号 |
US8299514(B2) |
申请公布日期 |
2012.10.30 |
申请号 |
US201113285182 |
申请日期 |
2011.10.31 |
申请人 |
KEETH BRENT;FAZAN PIERRE;ROUND ROCK RESEARCH, LLC |
发明人 |
KEETH BRENT;FAZAN PIERRE |
分类号 |
H01L21/316;H01L29/94;H01L21/3205;H01L21/76;H01L21/768;H01L21/8242;H01L23/52;H01L27/105;H01L27/108 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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