发明名称 Routing layer for mitigating stress in a semiconductor die
摘要 A routing layer for a semiconductor die is disclosed. The routing layer includes traces interconnecting integrated circuit bond-pads to UBMs. The routing layer is formed on a layer of dielectric material. The routing layer includes conductive traces arranged underneath the UBMs as to absorb stress from solder bumps attached to the UMBs. Traces beneath the UBMs protect parts of the underlying dielectric material proximate the solder bumps, from the stress.
申请公布号 US8299632(B2) 申请公布日期 2012.10.30
申请号 US201113092519 申请日期 2011.04.22
申请人 TOPACIO RODEN;WONG GABRIEL;ATI TECHNOLOGIES ULC 发明人 TOPACIO RODEN;WONG GABRIEL
分类号 H01L23/48;H01L23/52;H01L29/40 主分类号 H01L23/48
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