发明名称 High strip rate downstream chamber
摘要 A gas chamber contains upper and lower chamber bodies forming a cavity, a heating chuck for a wafer, a remote gas source, and an exhaust unit. Gas is injected into the cavity through channels in an injector. Each channel has sections that are bent with respect to each other at a sufficient angle to substantially eliminate entering light rays entering the channel from exiting the channel without reflection. The channels have funnel-shaped nozzles at end points proximate to the chuck. The injector also has thermal expansion relief slots and small gaps between the injector and mating surfaces of the chamber and gas source. The temperature of the injector is controlled by a cooling liquid in cooling channels and electrical heaters in receptacles of the injector. The upper chamber body is funnel-shaped and curves downward at an end of the upper chamber body proximate to the chuck.
申请公布号 US8298336(B2) 申请公布日期 2012.10.30
申请号 US20050096820 申请日期 2005.04.01
申请人 WANG ING-YANN;WINNICZEK JAROSLAW W.;COOPERBERG DAVID J.;EDELBERG ERIK A.;CHEBI ROBERT P.;LAM RESEARCH CORPORATION 发明人 WANG ING-YANN;WINNICZEK JAROSLAW W.;COOPERBERG DAVID J.;EDELBERG ERIK A.;CHEBI ROBERT P.
分类号 C23C16/455;C23C16/06;C23C16/22;C23C16/458;C23F1/00;H01L21/306 主分类号 C23C16/455
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