发明名称 |
3D integrated circuit device fabrication using interface wafer as permanent carrier |
摘要 |
A method is provided for fabricating a 3D integrated circuit structure. Provided are an interface wafer including a first wiring layer and through-silicon vias, and a first active circuitry layer wafer including active circuitry. The first active circuitry layer wafer is bonded to the interface wafer. Then, a first portion of the first active circuitry layer wafer is removed such that a second portion remains attached to the interface wafer. A stack structure including the interface wafer and the second portion of the first active circuitry layer wafer is bonded to a base wafer. Next, the interface wafer is thinned so as to form an interface layer, and metallizations coupled through the through-silicon vias in the interface layer to the first wiring layer are formed on the interface layer. Also provided is a tangible computer readable medium encoded with a program that comprises instructions for performing such a method. |
申请公布号 |
US8298914(B2) |
申请公布日期 |
2012.10.30 |
申请号 |
US20080194198 |
申请日期 |
2008.08.19 |
申请人 |
FAROOQ MUKTA G.;HANNON ROBERT;IYER SUBRAMANIAN S.;KOESTER STEVEN J.;LIU FEI;PURUSHOTHAMAN SAMPATH;YOUNG ALBERT M.;YU ROY R.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FAROOQ MUKTA G.;HANNON ROBERT;IYER SUBRAMANIAN S.;KOESTER STEVEN J.;LIU FEI;PURUSHOTHAMAN SAMPATH;YOUNG ALBERT M.;YU ROY R. |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|