发明名称 |
Spin torque transfer memory cell structures and methods |
摘要 |
Spin Torque Transfer (STT) memory cell structures and methods are described herein. One or more STT memory cell structures include a tunneling barrier material positioned between a ferromagnetic storage material and a pinned ferromagnetic material in contact with an antiferromagnetic material. The tunneling barrier material is a multiferroic material and the antiferromagnetic material, the ferromagnetic storage material, and the pinned ferromagnetic material are positioned between a first electrode and a second electrode.
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申请公布号 |
US8300454(B2) |
申请公布日期 |
2012.10.30 |
申请号 |
US20100885100 |
申请日期 |
2010.09.17 |
申请人 |
KRAMER STEPHEN J.;SANDHU GURTEJ S.;MICRON TECHNOLOGY, INC. |
发明人 |
KRAMER STEPHEN J.;SANDHU GURTEJ S. |
分类号 |
G11C11/15 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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